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Sabritec specializes in custom interconnect solutions for military, space/satellite, medical, telecom, commercial avionics and test & measurement applications.

 

MOV vs. Diode Characteristics

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MOV vs. DIODE Characteristics

Characteristics MOV Diode
Energy Higher Lower
Clamping Higher Lower
Polarity Bipolar only Unipolar & Bipolar
Capacitance 1 to 4nF 100pF to 3nF
Standoff Voltage Medium to High Low to Medium
Leakage Current Higher Lower
Screening Limited Extensive JAN TX/TXV/S
Cost Lower Higher

 

Attributes of Popular Transient Voltage Suppression MOV & Diode

Advantages
  • Typically fail as an open circuit
  • Wide Range of Breakdown Voltages
  • Fast response time (<1ns)
  • Low clamping Voltage
Disadvantages
  • Inherent bipolar clamping
  • Single layer MOV have limited life
  • Limited power capability
  • Typically fail as an short circuit
  • Power rating decreases with temperature

 

 

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